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inchange semiconductor product specification silicon npn power transistors 2SC5802 description ? with to-3p(h)is package ? high voltage;high speed ? wide area of safe operation applications ? for high voltage color display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a i cm collector current-peak 30 a p c total power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC5802 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =6a; i b =1.5a 3.0 v v besat base-emitter saturation voltage i c =6a; i b =1.5a 1.5 v i ces collector cut-off current v ce =1400v; v be =0 1.0 ma i cbo collector cut-off current v cb =800v; i e =0 10 | a i ebo emitter cut-off current v eb =4v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 48 h fe-2 dc current gain i c =6a ; v ce =5v 7 10 t f fall time v cc =200v; i c =6a;i b1 =1.2a i b2 =-2.4a;r l =33.3 |? 0.1 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC5802 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm)

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